Diodes DDTD (xxxx) C - Manual (Page 2)

DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
2 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
Electrical Characteristics - R1, R2 Types
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(OFF)
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
⎯ ⎯ V V
CC
= 5V, I
O
= 100
μA
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(ON)
⎯ ⎯
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V O = 0.3V, I O = 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage V O(ON)
⎯ ⎯ 0.3V V I O /I l = -50mA/-2.5mA
Input Current
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
I
l
⎯ ⎯
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
mA V
I
= 5V
Output Current I
O(OFF)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
G
l
33
39
47
56
47
56
56
56
⎯ ⎯ ⎯ V
O
= 5V, I
O
= 50mA
Input Resistor Tolerance ΔR
1
-30 ⎯ +30 % ⎯
Resistance Ratio Tolerance Δ(R
2
/R
1
) -20 ⎯ +20 % ⎯
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz
V CE = 10V, I E = 5mA,
f = 100MHz
Electrical Characteristics - R1 Only, R2 Only Types
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50 μA
Collector-Emitter Breakdown Voltage BV
CEO
40 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
BV
EBO
5 ⎯ ⎯ V
I
E
= 50
μA
I
E
= 50 μA
I
E
= 50 μA
I
E
= 720 μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
I
EBO
⎯
⎯
⎯
300
⎯
0.5
0.5
0.5
580
μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ 0.3 V I
C
= 50mA, I
B
= 2.5mA
DC Current Transfer Ratio
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
h
FE
100
100
100
56
250
250
250
⎯
600
600
600
⎯
⎯ I
C
= 50mA, V
CE
= 5V
Bias Resistor Tolerance ΔR
1
or ΔR
2
-30 ⎯ +30 % ⎯
Gain-Bandwidth Product* f T
⎯ 200 ⎯ MHz
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
* Transistor - For Reference Only