Diodes FMMT417 - Manual (Page 4)

FMMT415-FMMT417
Datasheet Number: DS33084 Rev. 5 - 2
4 of 7
www.diodes.com
February 2014
© Diodes Incorporated
FMMT415
FMMT417
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Emitter Breakdown Voltage
FMMT415
BV
CES
260 — —
V
I
C
= 1mA
T J = -55 to +150°C
FMMT417 320 — — I
C
= 1mA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
100 — — V I
C
= 100µA
Emitter-Base Breakdown Voltage BV
EBO
6 — — V I
E
= 100µA
Collector Cutoff Current I
CBO
— —
100
10
nA
µA
V
CB
= 180V
V
CB
= 180V, T J = +100°C
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 4V
Static Forward Current Transfer Ratio (Note 8) h
FE
25 — — — I
C
= 10mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 8) V
CE(sat)
— — 500 mV I
C
= 10mA, I
B
= 1mA
Base-Emitter Saturation Voltage (Note 8) V
BE(sat)
— — 900 mV I
C
= 10mA, I
B
= 1mA
Pulsed Current in Second Breakdown I
USB
15
25 —
— —
— A
A V
C
= 200V, C
CE
= 620pF
V
C
= 250V, C
CE
= 620pF
Collector-emitter inductance L
ce
— 2.5 — nH Standard SOT23 leads
Output Capacitance C
obo
— — 8 pF
V
CB
= 20V, I
E
= 0
f = 100MHz
Transition Frequency f
T
40 — — MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.