Diodes FCX558 - Manual (Page 2)

FCX558
Da
tasheet Number: DS33059 Rev. 4 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
FCX558
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Limit Unit
Collector-Base Voltage V CBO
-400 V
Collector-Emitter Voltage V
CEO
-400 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-200 mA
Peak Pulse Current I
CM
-500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P D
1 W
Thermal Resistance, Junction to Ambient Air (Note 5) R θJA 125 °C/W
Thermal Resistance, Junction to Leads (Note 6) R θJL 10.01
°C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Notes: 5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
M
a
x P
o
wer Di
s
s
ipat
ion
(W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm
a
l Re
si
s
tanc
e (°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
a
x
P
o
w
e
r D
iss
ipat
ion
(W)