Diodes DZT5551 - Manual (Page 4)

DZT5551
Document number: DS31219 Rev. 3 - 2
4 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
180 270 — V I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 7) BV
CEO
160 200 — V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage BV EBO
6.0 7.85 — V I E = 100µA, I C = 0
Collector Cutoff Current I
CBO
—
— <1
—
50
50 nA
µA V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current I
EBO
— <1 50 nA V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage V
CE(sat)
—
— 65
115
150
200 mV
mV I C = 10mA, I B = 1mA
I
C
= 50mA, I
B
= 5mA
Base-Emitter Saturation Voltage V
BE(sat)
—
—
760
840 1000
1200 mV
mV I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
DC Current Gain h
FE
80
80
30 130
145
65
—
250
—
—
I C = 1mA, V CE = 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 50mA, V
CE
= 5V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f
T
100 130 300 MHz
V CE = 10V, I C = 10mA,
f = 100MHz
Small Signal Current Gain h
fe
50 — 260 —
V
CE
= 10V, I
C
= 10mA,
f = 1kHz
Output Capacitance C
obo
— — 6 pF V
CB
= 10V, f = 1MHz
Noise Figure NF — — 8 dB
V
CE
= 5.0V, I
C
= 200µA,
R
S
= 1.0k Ω, f = 1.0kHz
Delay Time t
(d)
— 95 — ns
V
CC
= 10V, I
C
= 10mA,
I
B1
= -I
B2
= 1mA
Rise Time t
(r)
— 64 — ns
Storage Time t
(s)
— 1256 — ns
Delay Time t
(f)
— 140 — ns
Notes: 7. Pulse Test: Pulse width ≤ 300µs. Duty cycle ≤ 2.0%.