Diodes DZT5551 - Manual (Page 2)

DZT5551
Document number: DS31219 Rev. 3 - 2
2 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
180 V
Collector-Emitter Voltage V
CEO
160 V
Emitter-Base Voltage V
EBO
6 V
Continuous Collector Current I
C
600 mA
Peak Collector Current I
CM
1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
2 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 62.5 °C/W
Thermal Resistance, Junction to Leads (Note 6) R θJL 34.05 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition
6. Thermal resistance from junction to solder-point (at the end of the collector lead).