Electrical characteristics, Dxt651 – Diodes DXT651 User Manual
Page 3
DXT651
Document Number: DS31184 Rev: 5 - 2
3 of 6
February 2013
© Diodes Incorporated
DXT651
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Conditions
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
80
V
I
C
= 100
A, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
60
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
5
V
I
E
= 100
A, I
C
= 0
Collector-Base Cutoff Current
I
CBO
0.1
10
µA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +100°C
Emitter-Base Cutoff Current
I
EBO
0.1 µA
V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
V
CE(sat)
0.08
0.23
0.3
0.6
V
V
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.85 1.25 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage
V
BE(on)
0.8 1 V
V
CE
= 2V, I
C
= 1A
DC Current Gain
h
FE
70
100
80
40
200
200
185
120
300
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
AC CHARACTERISTICS
Transition Frequency
f
T
140 200
MHz
V
CE
= 5V, I
C
= 100mA, f = 100MHz
Output Capacitance
C
obo
30 pF
V
CB
= 10V, f = 1MHz
Switching Times
t
on
t
off
35
230
ns
ns
V
CC
= 10V. I
C
= 500mA,
I
B1
= I
B2
= 50mA
Notes:
7. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
4
5
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
I
, COL
L
E
CT
O
R C
URR
E
NT
(
A
)
C
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
50
100
150
200
250
300
350
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
h
, DC C
URR
E
NT GAI
N
FE
Fig. 3 Typical DC Current Gain
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V
= 2V
CE