Diodes LBN150B01 - Manual (Page 4)

Characteristics of NPN Transistor (Q2):
0
50
200
100
150
0 2 4 6 8 1
I,
1
10
100
1,000
1 10 100 1,000
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
0
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(mA
)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Collector Current vs. Collector-Emitter Voltage
CE
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.2
1.4
1
0.1 1 10 100 1,000
V
, B
ASE
-EM
IT
T
E
R
V
O
L
T
A
G
E (
V
)
BE
I , COLLECTOR CURRENT (mA)
Fig. 6 Base-Emitter Turn-on Voltage vs. Collector Current
C
0.01
0.1
100
1
10
0.1 1 10 100 1,000
V,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
SA
T
URA
T
IO
N
VO
L
T
A
G
E
(
V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector-Emitter Saturation Voltage
vs. Collector Current
C
1
3
2
5
6
4
20 12 14 16 18 10
C
/C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
ib
o
o
b
o
V , REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
R
0 0
0.2
0.4
0.6
0.8
1.2
1.4
1
0.1 1 10 100 1,000
V
, BASE
-EM
IT
T
E
R
SA
T
U
R
A
T
IO
N V
O
L
T
A
G
E (
V
)
BE(
SA
T
)
I , COLLECTOR CURRENT (mA)
Fig. 7 Base-Emitter Saturation Voltage vs. Collector Current
C
DS30749 Rev. 4 - 2 4 of 7
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LBN150B01
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