Diodes LBN150B01 - Manual (Page 2)

DS30749 Rev. 4 - 2 2 of 7
www.diodes.com
LBN150B01
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings: Discrete PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-6 V
Output Current - continuous (Note 4) I
C
-200 mA
Maximum Ratings: Discrete NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V CEO
40 V
Emitter-Base Voltage V EBO
6 V
Output Current - continuous (Note 4) I C
200 mA
Electrical Characteristics: Discrete PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
CBO
-40 ⎯ V I
C
= -10uA, I
E
= 0
Collector-Emitter Breakdown Voltage V
CEO
-40 ⎯ V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V EBO
-6 ⎯ V I E = -10
μA, I
C = 0
Collector Cutoff Current I
CEX
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current I
BL
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
Collector-Base Cut Off Current I
CBO
⎯ -50 nA V
CB
= -30V, I
E
= 0
Collector-Emitter Cut Off Current I
CEO
⎯ -50 nA V
CE
= -30V, I
B
= 0
Emitter-Base Cut Off Current I
EBO
⎯ -50 nA V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
105 ⎯ ⎯
V
CE
= -1V, I
C
= -100
μA
110 ⎯ ⎯ V
CE
= -1V, I
C
= -1 mA
120 ⎯ ⎯
V CE = -1V, I C = -10 mA
90 ⎯ ⎯
V
CE
= -1V, I
C
= -50 mA
32 ⎯ ⎯
V
CE
= -1V, I
C
= -100 mA
DC Current Gain h FE
10 ⎯ ⎯ V
CE
= -1V, I
C
= -200 mA
⎯ -0.08 I
C
= - 10 mA, I
B
= -1 mA
⎯ -0.15 I
C
= -50mA, I
B
= -5mA Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ -0.5
V
I
C
= -200mA, I
B
= -20mA
Equivalent on-resistance R CE(SAT)
⎯ 2.5 Ω
I C = -200mA, I B = -20mA
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ -0.92 V V
CE
= -5V, I
C
= -200mA
⎯ -0.95 I
C
= -10mA, I
B
= -1mA
Base-Emitter Saturation Voltage V
BE(SAT) ⎯ -1.1
V
I C = -50mA, I B = -5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
⎯ 4 pF V
CB
= -5.0 V, f = 1.0 MHz, I
E
= 0
Input Capacitance C IBO
⎯ 8 pF V EB = -5.0 V, f = 1.0 MHz, I C = 0
Input Impedance h
IE
2 12 K Ω
Voltage Feedback ratio h
RE
0.1 10 x 10E-4
Small Signal Current Gain h
FE
100 400 ⎯
Output Admittance h
OE
3 60 μS
V
CE
= 1.0V, Ic = 10mA, f = 1.0 KHz
Current Gain-Bandwidth Product f
T
250 ⎯ MHz V
CE
= - 20V, I
C
= -10mA, f = 100 MHz
Noise Figure NF ⎯ 4 dB
V
CE
= - 5V, Ic = -100 uA, R
s
= 1 Ω,
f =1 KHz
SWITCHING CHARACTERISTICS
Delay Time
t d
⎯ 35 ns V CC = -3.0 V, I C = -10 mA,
Rise Time t
r
⎯ 35 ns V
BE(OFF)
= 0.5V, I
B1
= -1.0 mA
Storage Time t
s
⎯ 225 ns V
CC
= -3.0 V, I
C
= -10 mA,
Fall Time t
f
⎯ 75 ns I
B1
= I
B2
= -1.0 mA
Notes: 4. Short duration pulse test used to minimize self-heating effect.