Diodes LBN150B01 - Manual (Page 3)

Electrical Characteristics: Discrete NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
CBO
60 ⎯ V I
C
= 10uA, I
E
= 0
Collector-Emitter Breakdown Voltage V
CEO
40 ⎯ V I
C
= 1.0mA, I
B
= 0
NEW PRODUCT
Emitter-Base Breakdown Voltage V
EBO
6 ⎯ V I
E
= 10
μA, I
C
= 0
Collector Cutoff Current I
CEX
⎯ 50 nA V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current I BL
⎯ 50 nA V CE = 30V, V EB(OFF) = 3.0V
Collector-Base Cut Off Current I
CBO
⎯ 50 nA V
CB
= 30V, I
E
= 0
Collector-Emitter Cut Off Current I
CEO
⎯ 50 nA V
CE
= 30V, I
B
= 0
Emitter-Base Cut Off Current I EBO
⎯ 50 nA V EB = 5V, I C = 0
ON CHARACTERISTICS (Note 4)
150 ⎯ ⎯ V
CE
= 1V, I
C
= 100 μA
170 ⎯ ⎯
V CE = 1V, I C = 1 mA
160 ⎯ ⎯
V
CE
= 1V, I
C
= 10 mA
70 ⎯ ⎯ V
CE
= 1V, I
C
= 50 mA
30 ⎯ ⎯
V CE = 1V, I C = 100 mA
DC Current Gain h
FE
12 ⎯ ⎯
V
CE
= 1V, I
C
= 200 mA
⎯ 0.08 I
C
= 10 mA, I
B
= 1 mA
⎯ 0.16 I
C
= 50mA, I
B
= 5mA Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.36
V
I
C
= 200mA, I
B
= 20mA
Equivalent on-resistance R
CE(SAT)
⎯ 1.8 Ω
I
C
= 200mA, I
B
= 20mA
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ 0.98 V V
CE
= 5V, I
C
= 200mA
⎯ 0.95 I C = 10mA, I B = 1mA
V BE(SAT) ⎯ 1.1
V
I
C
= 50mA, I
B
= 5mA
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
⎯ 4 pF V
CB
= 5.0 V, f = 1.0 MHz, I
E
= 0
Input Capacitance C
IBO
⎯ 8 pF V
EB
= 5.0 V, f = 1.0 MHz, I
C
= 0
Input Impedance h
IE
2 12 K Ω
Voltage Feedback ratio h RE
0.1 10 x 10E-4
DS30749 Rev. 4 - 2 3 of 7
www.diodes.com
LBN150B01
© Diodes Incorporated
Small Signal Current Gain h
FE
100 400 ⎯
h
OE
3 60 μS
V CE = 1.0V, Ic = 10mA, f = 1.0 KHz
Output Admittance
Current Gain-Bandwidth Product f T
250 ⎯ MHz V CE = 20V, I C = 0mA, f = 100 MHz
NF ⎯ 4 dB
V
CE
= 5V, Ic = 100 uA, R
s
= 1
Ω,
f =1 KHz
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯ 35 ns V
CC
= -3.0 V, I
C
= 10 mA,
Rise Time t
r
⎯ 35 ns V
BE(OFF)
= 0.5V, I
B1
= 1.0 mA
Typical Characteristics
1
10
100
1,000
0.1 1 10 100
V , COLLECTOR EMITTER CURRENT (V)
Fig. 2 Safe Operating Area
CE
I
, COL
L
E
CT
O
R
CURREN
T
(
m
A
)
C
0
50
100
25 50 75 100 125 150 175
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs Ambient Temperature
A
150
200
250
300
350
0