Diodes MBR10100C - Manual (Page 4)

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Aug. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
4
Absolute Maximum Ratings (Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
<
1/ 
JA
.
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
Maximum Thermal Resistance

JC
Junction to Case
TO-220-3 (2)/
TO-252-2 (1)
3.0
C/W
TO-220F-3 4.5
TO-263-2 2.0

JA
Junction to
Ambient
TO-220-3 (2)/
TO-252-2(1)
60
C/W
TO-220F-3 60
TO-263-2 50
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(Rated V
R
) T
C
=136 C
I
F(AV)
5 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20kHz) T
C
=134 C
I
FRM
10 A
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single Phase,
60Hz)
I
FSM
100 A
Operating Junction Temperature Range (Note 2) T
J
150 C
Storage Temperature Range T
STG
-55 to 150 C
Voltage Rate of Change (Rated V
R
) dv/dt 10000 V/ s
ESD (Machine Model=C) > 400 V
ESD (Human Body Model=3B) > 8000 V