Diodes DFLS1200Q - Manual (Page 2)

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DFLS1200Q
Document number: DS37057 Rev. 1 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated
DFLS1200Q
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
200 V
RMS Reverse Voltage V
R(RMS)
141 V
Average Forward Current I
F(AV)
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
40 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Ambient (Note 6) R
θJA
132  °C/W
Thermal Resistance Junction to Soldering Point (Note 7) R
θJS
 7 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 8) V
(BR)R
200   V I
R
= 8μA
Forward Voltage V
F
  0.85 V I
F
= 1.0A
Leakage Current (Note 8) I
R
  100 μA V
R
= 200V, T
A
= +25°C
Total Capacitance C
T
 23  pF V
R
= 5VDC, f = 1MHz
Notes: 6. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf. T
A
= +25°C
7. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
8. Short duration pulse test used to minimize self-heating effect.
0.0001
0.01
0.001
10
1
0.1
0.2 0 0.4 0.6 0.8 1 1.2 1.4
I,
I
N
S
TA
N
TA
N
E
O
U
S F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1, Typical Forward Characteristics
F
0 20 40 60 80 100 120 140 160 200 180
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2, Typical Reverse Characteristics
R