Electrical characteristics, Package characteristics – Diodes 74LVC2G34 User Manual
Page 4
74LVC2G34
Document number: DS35165 Rev. 5 - 2
4 of 12
October 2013
© Diodes Incorporated
74LVC2G34
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
V
CC
+40°C to +85°C
-40°C to +125°C
Min
Max
Min
Max
Unit
V
OH
High-Level Output
Voltage
I
OH
= -100μA
1.65V to 5.5V V
CC
– 0.1
—
V
CC
– 0.1
—
V
I
OH
= -4mA
1.65V
1.2
—
0.95
—
I
OH
= -8mA
2.3V
1.9
—
1.7
—
I
OH
= -16mA
3V
2.4
—
1.9
—
I
OH
= -24mA
2.3
—
2.0
—
I
OH
= -32mA
4.5V
3.8
—
3.4
—
V
OL
Low-Level Output
Voltage
I
OL
= 100μA
1.65V to 5.5V
—
0.1
—
0.1
V
I
OL
= 4mA
1.65V
—
0.45
—
0.70
I
OL
= 8mA
2.3V
—
0.3
—
0.45
I
OL
= 16mA
3V
—
0.4
—
0.60
I
OL
= 24mA
—
0.55
—
0.80
I
OL
= 32mA
4.5V
—
0.55
—
0.80
I
I
Input Current
V
I
= 5.5V or GND
0 to 5.5V
—
± 5
—
± 20
μA
I
OFF
Power Down Leakage
Current
V
I
or V
O
= 5.5V
0
—
± 10
—
± 20
μA
I
CC
Supply Current
V
I
= 5.5V or GND, I
O
= 0
1.65V to 5.5V
—
10
—
40
μA
∆I
CC
Additional Supply
Current
Input at V
CC
–0.6V
3V to 5.5V
—
500
—
5000
μA
Package Characteristics
(@T
A
= +25°C, V
CC
= 3.3V, unless otherwise specified.)
Symbol
Parameter
Package
Conditions
Min
Typ
Max
Unit
C
I
Input Capacitance
Typical of all packages
Vcc = 3.3V
V
I
= V
CC
– or GND
—
3.5
—
pF
θ
JA
Thermal Resistance Junction-
to-Ambient
SOT26
(Note 6)
—
204
—
°C/W
SOT363
—
371
—
X2-DFN1410-6
—
430
—
X2-DFN1409-6
—
450
—
X2-DFN1010-6
—
510
—
θ
JC
Thermal Resistance Junction-
to-Case
SOT26
(Note 6)
—
52
—
°C/W
SOT363
—
143
—
X2-DFN1410-6
—
190
—
X2-DFN1409-6
—
225
—
X2-DFN1010-6
—
250
—
Note:
6. Test condition for SOT26, SOT363, X2-DFN1410-6, X2-DFN1409-6 and X2-DFN1010 -6: Device mounted on FR-4 substrate PC board, 2oz copper
with minimum recommended pad layout.