Diodes AH921 - Manual (Page 5)

Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH921
Jul. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
5
Electrical Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage V
CC
Operating 3.5 12 24 V
V
CC
=12V, B
RP
3.0 5.0 mA
Supply Current I
CC
V
CC
=12V, B>B
OP
3.0 5.0 mA
Saturation Voltage V
SAT
I
OUT
=20mA, B>B
OP
185 500 mV
Output Leakage Current I
LEAKAGE
V
CC
=V
OUT
=24V, B
RP
0.1 10
μA
Output Rising Time t
RISING
C
L
=20pF 0.4 2
μs
Output Falling Time t
FALLING
C
L
=20pF 0.4 2
μs
Magnetic Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
Parameter Symbol Min Typ Max Unit
Operating Point B
OP
5 22 40 Gauss
Releasing Point B
RP
-40 -22 -5 Gauss
Hysteresis B
HYS
45 Gauss
Figure 4. Magnetic Flux Density of AH921