Diodes AP8802H - Manual (Page 3)

AP8802H
60V 1A LED STEP-DOWN CONVERTER
AP8802H
Document number: DS32227 Rev. 6 - 2
3 of 14
www.diodes.com
May 2012
© Diodes Incorporated
PRELIMINARY
NEW PROD
UC
T
Absolute Maximum Ratings (Note 4)
Symbol Parameter Rating Unit
V
IN
V
IN
pin Voltage -0.3 to +65 V
V
SW SW Voltage -0.3 to +65 V
V
CTRL CTRL Pin Input Voltage -0.3 to +6 V
V
SENSE
SET Voltage (Note 5) +0.3 to -5 V
T
J
Junction Temperature 150 °C
T
LEAD
Lead Temperature Soldering 300 °C
T
ST
Storage Temperature Range -65 to +150 °C
Note: 4 All voltages unless otherwise stated are measured with respect to GND.
5. V SENSE is measured with respect to V IN
.
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings
only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not
implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Recommended Operating Conditions
Symbol Parameter Min Max Unit
V
IN Operating Input Voltage relative to GND 8.0 60.0 V
V
CTRLDC Voltage range for 24% to 200% DC dimming relative to GND (Note 6) 0.3 2.5 V
V
CTRLL Voltage Low for PWM dimming relative to GND 0 0.2 V
f
OSC Maximum Switching Frequency (Note 7) — 625 kHz
T
A Ambient Temperature Range -40 +125 °C
Duty Cycle Using Inductor ≥ 100µH (Note 8) 0.10 0.95 —
Notes: 6. For 100% brightness either leave floating or connect to 1.25V relative to GND.
7. AP8802H will operate at higher frequencies but accuracy will be affected due to propagation delays.
8. For most applications the LED current will be within 5% over the duty cycle range specified. Duty cycle accuracy is also dependent on
propagation delay. Smaller size inductors can be used but LED current accuracy may be greater than 8% at extremes of duty cycle. This is most
noticeable at low duty cycles (less than 0.1) or when the input voltage is high and only one LED is being driven.
Electrical Characteristics (V
IN
= 12V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
I
OUT Continuous switch current (Note 9) — — 1 A
I
Q Quiescent Current - 75 120 μA
V
THD Internal Threshold Voltage 190 200 210 mV
V
SENSEHYS Sense threshold hysteresis — 15 — %
SET SET pin input current V
SET
= V
IN
-0.2 — 5 — μA
V
REF Internal Reference Voltage — 1.25 — V
R
DS(ON) On Resistance of MOSFET I
SW
= 0.8A — 0.65 1.10 Ω
I
SW_LEAKAGE Switch leakage current — - 8 μA
θ
JA Thermal Resistance Junction-to-Ambient SO-8EP (Note 10) — 45 —
°C/W
θ
JC Thermal Resistance Junction-to-Case SO-8EP (Note 10) — 7 —
°C/W
Notes: 9. Refer to figure 8 for the device derating curve.
10. Test condition for SO-8EP: Device mounted on FR-4 PCB, 2”x2”, 2oz copper, minimum recommended pad layout on top layer and thermal vias to
bottom layer ground plane. See Land pad diagram For better thermal performance, larger copper pad for heat-sink is needed.