Diodes AP5727 - Manual (Page 3)

AP5727
BIAS POWER SUPPLY FOR OLED
SUB DISPLAY AND TFT-LED
AP5727
Document number: DS31887 Rev. 2 - 2
3 of 10
www.diodes.com
January 2011
© Diodes Incorporated
NEW PROD
UC
T
Absolute Maximum Ratings (T
A
= 25
°C)
Symbol Parameter Rating Unit
V
IN
VIN Pin Voltage -0.3~7 V
V
SW
SW Voltage -0.3~32 V
V
FB
Feedback Pin Voltage -0.3~7 V
EN EN -0.3~7 V
T
J(MAX)
Maximum Junction Temperature 150 °C
T
LEAD
Lead Temperature 300 °C
T
ST
Storage Temperature Range -65 to +150 °C
Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be
exceeded under any condition.
Recommended Operating Conditions
Symbol Parameter Min Max Unit
V
IN
Input Voltage 2.7 5.5 V
T
J
Operating Junction Temperature -40 125 °C
T
A
Operating Ambient Temperature -40 85 °C
Electrical Characteristics (V
IN
= 3.6V, T
A
= 25
°C, unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
System Supply Input
V
IN
Operating Input Voltage 2.7 - 5.5 V
UVLO Under Voltage Lockout - 2.2 2.4 V
Under Voltage Lockout Hysteretic - 85 - mV
I
Q
Quiescent Current FB=1.3V, No Switching - 500 - μA
I
SD
Shutdown Current V
EN
< 0.4V - 0.1 1 μA
Oscillator
F
OSC
Operation Frequency 1 1.2 1.4 MHz
Dmax Maximum Duty Cycle 86 90 - %
Reference Voltage
V
FB
Feedback Voltage 1.225 1.25 1.275 V
I
FB
FB Pin Bias Current 10 45 100 nA
MOSFET
R
DS(on)
On Resistance of MOSFET - 0.95 1.2 Ω
I
OCP
Switching Current Limit Normal Operation - 750 - mA
Control and Protection
EN Voltage High ON 1.5 - - V
EN Voltage Low OFF - - 0.4 V
I
EN
EN Pin Pull Low Current - 4 6 μA
θ
JA
Thermal Resistance Junction-to-
Ambient
SOT25 (Note 2) 162
o
C/W
θ
JC
Thermal Resistance Junction-to-
Case
SOT25 (Note 2) 36
o
C/W
Notes: 2. Test condition for SOT25: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout