Diodes AP5724 - Manual (Page 3)

AP5724
Document number: DS31843 Rev. 4 - 2
3 of 15
www.diodes.com
December 2013
© Diodes Incorporated
AP5724
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
IN
Input Voltage 2.7 5.5 V
T
J
Operating Junction Temperature -40 125 °C
T
A
Operating Ambient Temperature -40 85 °C
Electrical Characteristics
(@ V
IN
= 3.6V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
System Supply Input
V
IN
Operating Input Voltage 2.7 — 5.5 V
UVLO Under Voltage Lockout — 2.2 2.4 V
Under Voltage Lockout Hysteretic — 85 — mV
I
Q
Quiescent Current FB = 0.2V, No Switching — 500 — μA
I
SD
Shutdown Current V
EN
< 0.4V — 0.1 1 μA
Oscillator
F
OSC
Operation Frequency 1 1.2 1.4 MHz
Dmax Maximum Duty Cycle 86 90 — %
Reference Voltage
V
FB
Feedback Voltage 0.09 0.1 0.11 V
I
FB
FB Pin Bias Current 10 45 100 nA
MOSFET
Rds(on) On Resistance of MOSFET — 0.95 1.2 Ω
I
OCP
Switching Current Limit Normal Operation — 750 — mA
Control and Protection
EN Voltage High ON 1.5 — — V
EN Voltage Low OFF — — 0.4 V
I
EN
EN Pin Pull Low Current — 4 6 μA
OVP OVP Threshold 26 30 34 V
θ
JA
Thermal Resistance Junction-to-Ambient
SOT26 (Note 3) — 162 —
°C/W TSOT26 (Note 3) — 152 —
U-DFN2020-6 (Note 3) — 200 —
θ
JC
Thermal Resistance Junction-to-Case
SOT26 (Note 3) — 36 —
°C/W TSOT26 (Note 3) — 32 —
U-DFN2020-6 (Note 3) — 30 —
Note: 3. Test condition for SOT26, TSOT26 and U-DFN2020-6: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum
recommended pad layout