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New prod uc t ap7176b, Electrical characteristics, Ap7176b – Diodes AP7176B User Manual

Page 4

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AP7176B

Document number: DS35818 Rev.3 - 2

4 of 14

www.diodes.com

April 2014

© Diodes Incorporated

NEW PROD

UC

T

AP7176B

Electrical Characteristics

(cont.) (Specifications apply over V

CNTL

= 5V, V

IN

= 1.8V, V

OUT

= 1.2V and T

A

= -40°C to +85°C, typical

values @T

A

= +25°C, unless otherwise specified.)

Symbol Parameter

Conditions

AP7176B

Unit

Min

Typ

Max

OUTPUT VOLTAGE

V

REF

Reference Voltage

FB=V

OUT

— 0.8 — V

Output Voltage Accuracy

V

CNTL

= 3.0 ~ 5.5V, I

OUT

= 0~3A,

T

J

= -40 to +125°C

-1.5 — +1.5 %

Load Regulation

I

OUT

=0A to 3A

0.06

0.25

%

Line Regulation

I

OUT

=10mA, V

CNTL

= 3.0 to 5.5V

-0.15

+0.15

%/V

V

OUT

Pull-low Resistance

V

CNTL

= 3.3V, V

EN

= 0V, V

OUT

<0.8V

10

FB Input Current

V

FB

= 0.8V

-100

+100

nA

DROPOUT VOLTAGE

V

DROP

V

IN

-to-V

OUT

Dropout Voltage

(Note 5)

V

CNTL

= 5.0V,

I

OUT

= 3A

V

OUT

= 2.5V

T

J

= 25°C

0.33

0.38

V

T

J

= -40°C to +125°C

0.53

V

OUT

= 1.8V

T

J

= +25°C

0.31

0.36

T

J

= -40°C to +125°C

0.50

V

OUT

= 1.2V

T

J

= +25°C

0.30

0.35

T

J

= -40°C to +125°C

0.48

I

LIM

Current-Limit

Level

T

J

= +25°C, V

OUT

= 80% V

NOMINAL

4.5 5.7 6.7 A

T

J

= -40°C to +125°C

4.2

A

PROTECTIONS

I

SHORT

Short Current-Limit Level

V

FB

< 0.2V

1.1

A

T

SD

Thermal

Shutdown

Temperature

T

J

rising

170

°C

Thermal Shutdown Hysteresis

50

°C

ENABLE AND SOFT-START

EN Logic High Threshold Voltage

V

EN

rising

0.5 0.8 1.1 V

EN Hysteresis

— 0.1 — V

EN Pull-High Current

EN = GND

5

µA

T

SS

Soft-Start

Interval

0.3 0.6 1.2 ms

Turn On Delay

From being enabled to V

OUT

rising 10%

200

350

500

µs

POWER-GOOD AND DELAY

V

THPG

Rising PG Threshold Voltage

V

FB

rising

90 92 95 %

PG Threshold Hysteresis

8

%

PG Pull-low Voltage

PG sinks 5mA

0.25

0.4

V

PG Debounce Interval

V

FB

< falling PG voltage threshold

10

µs

PG Delay Time

From V

FB

= V

THPG

to rising edge of the V

PG

1 2 4 ms

THERMAL CHARACTERISTIC

θ

JA

Thermal Resistance Junction-to-
Ambient

SO-8EP (Note 6)

70

°C/W

MSOP-8EP (Note 7)

80

°C/W

U-DFN3030-10 (Note 6)

60

°C/W

θ

JC

Thermal Resistance Junction-to-
Ambient

SO-8EP (Note 6)

30

°C/W

MSOP-8EP (Note 7)

30

°C/W

U-DFN3030-10 (Note 6)

20

°C/W

Notes:

5. Dropout voltage is the voltage difference between the input and the output at which the output voltage drops 2% below its nominal value.

6. Device mounted on 2"*2" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

7. Device mounted on 2"*2" FR-4 substrate PC board, 2oz copper,with minimum recommended pad layout.