Ap133, Electrical characteristics – Diodes AP133 User Manual
Page 5
AP133
300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT
LOW DROPOUT LINEAR REGULATOR
AP133 Rev. 6
5 of 15
FEBRUARY 2009
©
Diodes Incorporated
Electrical Characteristics
(T
A
= 25
o
C, V
IN
= V
OUT
+1V, C
IN
= 1uF, C
OUT
= 1uF, V
EN
= 2V, unless otherwise stated)
Symbol
Parameter
Test Conditions
Min Typ. Max
Unit
I
Q
Input Quiescent Current
I
OUT
= 0~300mA
⎯
40 60 uA
I
SHDN
Input Shutdown Current
V
EN
= 0V, I
OUT
= 0
⎯
1 uA
I
LEAK
Input Leakage Current
V
EN
= 0V, OUT grounded
⎯
1 uA
V
Dropout
Dropout Voltage
V
OUT
≥ 1.5V, I
OUT
= 300mA
350
450 mV
V
REF
ADJ reference voltage
I
OUT
= 0
0.8
V
I
ADJ
ADJ leakage
⎯
1 uA
V
OUT
Output Voltage Accuracy
-2
2
%
ΔV
OUT
/
ΔV
IN
/V
Line Regulation
V
IN
= V
OUT
+1V to 5.5V,
I
OUT
= 1mA
0.05 %/V
ΔV
OUT
/V
OUT
Load Regulation
I
OUT
from 1mA to 300mA
-1
1
%
t
ST
Start-up Time
V
EN
= 0V to 2.0V,
I
OUT
= 300mA
25 us
PSRR PSRR 1kHz,
I
OUT
= 0mA
65
dB
I
SHORT
Short-circuit Current
V
IN
= 5.0V, V
OUT
< 0.2V
120
mA
I
LIMIT
Current limit
V
OUT
= 3V, R
OUT
= 3
Ω 400
600
mA
V
IL
EN Input Logic Low Voltage
0.4
V
V
IH
EN Input Logic High Voltage
1.4
V
I
EN
EN Input leakage
V
EN
= 0V or 5.5V
-1
1
uA
T
SHDN
Thermal shutdown threshold
145
°C
T
HYS
Thermal shutdown hysteresis
20
°C
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT25
Device mounted on FR-4
substrate, 2oz copper, with
minimum recommended pad
layout.
176
o
C/W
DFN2020-6
142
θ
JC
Thermal Resistance
Junction-to-Case
SOT25
41
o
C/W
DFN2020-6
36