Diodes AP2112 - Manual (Page 12)

Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
12
Electrical Characteristics (Continued)
AP2112-ADJ Electrical Characteristic (Note 2)
V
IN
=2.5V, C
IN
=1.0 μF (Ceramic), C
OUT
=1.0 μF (Ceramic), Typical T
A
=25°C, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
A
=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Reference Voltage V
REF
V
IN
=2.5V, 1mA≤I
OUT
≤ 30mA
V
REF
×98.5%
0.8
V
REF
×101.5%
V
Maximum Output
Current
I
OUT(Max)
V
IN
=2.5V, V
REF
=0.788V to 0.812V 600 mA
Load Regulation
( V △
OUT
/V
OUT
)/
△ I
OUT
V
IN
=2.5V, 1mA≤I
OUT
≤600mA -1 0.2 1 %/A
Line Regulation
( V △
OUT
/V
OUT
)/
△ V
IN
2.5V≤V
IN
≤6V, I
OUT
=30mA -0.1 0.02 0.1 %/V
Quiescent Current I
Q
V
IN
=2.5V, I
OUT
=0mA 55 80 μA
Standby Current I
STD
V
IN
=2.5V, V
EN
in OFF mode 0.01 1.0 μA
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
V
IN
=2.5V,
I
OUT
=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
( V △
OUT
/V
OUT
)/ T △
I
OUT
=30mA
T
A
=-40°C to 85°C
±100 ppm/°C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
RMS Output Noise V
NOISE
No Load, 10Hz≤f≤100kHz 50 μV
RMS
VEN High Voltage V
IH
Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage V
IL
Enable logic low, regulator off 0 0.4
Start-up Time t
S
No Load 20 μs
EN Pull Down Resistor R
PD
3.0 M Ω
VOUT Discharge
Resistor
R
DCHG
Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature
T
OTSD
160
°C
Thermal Shutdown
Hysteresis
T
HYOTSD
25
Thermal Resistance θ
JC
SOT-23-5 96 °C /W