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Data sheet, Electrical characteristics (continued) – Diodes AP2112 User Manual

Page 10

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Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2112

Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

10

Electrical Characteristics (Continued)

AP2112-2.8 Electrical Characteristic (Note 2)

V

IN

=3.8V, C

IN

=1.0

μF (Ceramic), C

OUT

=1.0

μF (Ceramic), Typical T

A

=25°C, unless otherwise specified (Note 3).

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T

A

=25

°C

. Over temperature specifications guaranteed by design only.

Parameter Symbol Test

Conditions Min

Typ

Max

Unit

Output Voltage

V

OUT

V

IN

=3.8V, 1mA≤I

OUT

≤30mA

V

OUT

*98.5%

2.8

V

OUT

*101.5%

V

Maximum Output Current

I

OUT(MAX)

V

IN

=3.8V,

V

OUT

=2.758V to 2.842V

600 mA

Load Regulation

( V

OUT

/V

OUT

)/

I

OUT

V

OUT

=2.8V, V

IN

=V

OUT

+1V,

1mA≤I

OUT

≤600mA

-1 0.2 1 %/A

Line Regulation

( V

OUT

/V

OUT

)/

V

IN

3.8V≤V

IN

≤6V, I

OUT

=30mA -0.1

0.02

0.1

%/V

Dropout Voltage

V

DROP

I

OUT

=10mA

5

8

mV

I

OUT

=300mA

125

200

I

OUT

=600mA

250

400

Quiescent Current

I

Q

V

IN

=3.8V, I

OUT

=0mA

55

80

μA

Standby Current

I

STD

V

IN

=3.8V, V

EN

in OFF mode

0.01

1.0

μA

Power Supply Rejection
Ratio

PSRR

Ripple 0.5Vp-p
V

IN

=3.8V,

I

OUT

=100mA

f=100Hz 65

dB

f=1KHz

65

Output Voltage
Temperature Coefficient

( V

OUT

/V

OUT

)/ T

△ I

OUT

=30mA

T

A

=-40°C to 85°C

±100

ppm/°C

Short Current Limit

I

SHORT

V

OUT

=0V

50

mA

RMS Output Noise

V

NOISE

No Load, 10Hz≤f≤100kHz 50

μV

RMS

V

EN

High Voltage

V

IH

Enable logic high, regulator on

1.5

6.0

V

V

EN

Low Voltage

V

IL

Enable logic low, regulator off

0

0.4

Start-up Time

t

S

No Load

20

μs

EN Pull Down Resistor

R

PD

3.0 M

Ω

V

OUT

Discharge Resistor

R

DCHG

Set EN pin at Low

60

Ω

Thermal Shutdown
Temperature

T

OTSD

160

°C

Thermal Shutdown
Hysteresis

T

HYOTSD

25

Thermal Resistance

θ

JC

SOT-23-5

96

°C/W

SOIC-8

75

SOT-89-5

47