Electrical characteristics – Diodes AP2141D/ AP2151D User Manual
Page 4
AP2141D/ AP2151D
Document number: DS32242 Rev. 4 - 2
4 of 18
May 2013
© Diodes Incorporated
AP2141D/ AP2151D
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5V, unless otherwise specified.)
Symbol Parameter
Test
Conditions
Min
Typ
Max
Unit
V
UVLO
Input UVLO
1.6
1.9
2.5
V
I
SHDN
Input Shutdown Current
Disabled, I
OUT
= 0
0.5 1 µA
I
Q
Input Quiescent Current
Enabled, I
OUT
= 0
45
70
µA
I
LEAK
Input Leakage Current
Disabled, OUT grounded
0.1
1
µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.1 1 µA
R
DS(ON)
Switch On-Resistance
V
IN
= 5V,
I
OUT
= 0.5A
T
A
= +25°C
SOT25, MSOP-8,
MSOP-8EP, SO-8
95
115
m
Ω
U-DFN2018-6
90
110
-40°C
≤ T
A
≤ +85°C
140
V
IN
= 3.3V, I
OUT
=
0.5A
T
A
= +25
C
120
140
-40°C
≤ T
A
≤ +85°C
170
I
SHORT
Short-Circuit Current Limit
Enabled into short circuit, C
L
= 22µF
0.6 A
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4.0V, C
L
= 120µF, -40°C
≤ T
A
≤ +85°C
0.6 0.8 1.0 A
I
TRIG
Current limiting trigger threshold
Output Current Slew Rate (<100A/s) , C
L
= 22µF
1.0 A
I
SINK
EN Input leakage
V
EN
= 5V
1
µA
t
D(ON)
Output turn-on delay time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05 ms
t
R
Output turn-on rise time
C
L
= 1µF, R
LOAD
= 10
Ω
0.6
1.5
ms
t
D(OFF)
Output turn-off delay time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05 ms
t
F
Output turn-off fall time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05
0.1 ms
R
FLG
FLG output FET on-resistance
I
FLG
=10mA
20
40
Ω
t
BLANK
FLG blanking time
C
IN
= 10µF, C
L
= 22µF
4 7 15
ms
R
DIS
Discharge resistance (Note 5)
V
IN
= 5V, disabled, I
OUT
= 1mA
100
Ω
t
DIS
Discharge Time
C
L
= 1µF, V
IN
= 5V, disabled to V
OUT
< 0.5V
0.6 ms
T
SHDN
Thermal Shutdown Threshold
Enabled, R
LOAD
= 1k
Ω
140
C
T
HYS
Thermal Shutdown Hysteresis
25
C
θ
JA
Thermal Resistance Junction-to-
Ambient
SOT25 (Note 6)
170
°C/W
SO-8 (Note 6)
127
MSOP-8EP (Note 7)
67
U-DFN2018-6 (Note 7)
70
Notes:
5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.