Bst52, Electrical characteristics, A product line of diodes incorporated – Diodes BST52 User Manual
Page 3
BST52
Da
tasheet Number: DS33022 Rev. 4 - 2
3 of 6
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
BST52
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
90 - - V
I
C
= 10µA
Collector-Emitter Breakdown Voltage (Notes 6)
BV
CEO
80 - - V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
10 - - V
I
E
= 10µA
Collector Cutoff Current
I
CES
- - 10 µA
V
CE
= 80V
Emitter Cutoff Current
I
EBO
- - 10 µA
V
EB
= 8V
DC current transfer Static ratio (Notes 6)
h
FE
1000
2000
- -
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Notes 6)
V
CE(sat)
-
-
1.3
1.3
V
I
C
= 500mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA, T
J
=150°C
Base-Emitter Saturation Voltage (Notes 6)
V
BE(sat)
- -
1.9
V
I
C
= 500mA, I
B
= 0.5mA
Turn On Time
t
ON
-
0.4
- µs
I
C
= 500mA,
I
Bon
= I
Boff
= 0.5mA
Turn Off Time
t
OFF
1.5
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤2%.