Diodes BST52 - Manual (Page 2)

BST52
Da
tasheet Number: DS33022 Rev. 4 - 2
2 of 6
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
BST52
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
90 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V EBO
10 V
Continuous Collector Current I
C
500 mA
Peak Pulse Current I
CM
1.5 A
Base Current I B
100 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
1 W
Thermal Resistance, Junction to Ambient (Note 4) R θJA 125 °C/W
Thermal Resistance, Junction to Leads (Note 5) R θJL 8.66 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
25mm x 25mm 1oz Cu
Derating Curve
Temperature (°C)
M
a
x P
o
w
e
r D
issi
p
a
ti
o
n
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
25mm x 25mm 1oz Cu
T
amb
= 25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
rm
a
l R
e
si
st
a
n
ce
(°
C
/W
)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm 1oz Cu
T
amb
= 25°C
Single pulse
Pulse Power Dissipation
Pulse Width (s)
M
a
x P
o
w
e
r
D
issi
p
a
ti
o
n
(
W
)