Electrical characteristics – Diodes 2N7002A User Manual
Page 3
2N7002A
Document number: DS31360 Rev. 12 - 2
3 of 6
July 2013
© Diodes Incorporated
2N7002A
NEW PROD
UC
T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V,
I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 µA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.2
2.0 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
@ T
J
= +25°C
@ T
J
= +125°C
R
DS(ON)
3.5
3.0
6
5
V
GS
= 5.0V,
I
D
=
0.115A
V
GS
= 10V, I
D
=
0.115A
Forward Transconductance
g
FS
80
mS
V
DS
= 10V,
I
D
=
0.115A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
23
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
3.4
pF
Reverse Transfer Capacitance
C
rss
1.4
pF
Gate Resistance
R
G
260 400
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= 30V, I
D
= 0.115A,
R
L
= 150
,
V
GEN
= 10V
,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
33
ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.01
0.1
1
1
2
3
4
5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V
= 5V
Pulsed
DS