Diodes 2N7002A User Manual
Product summary, Description, Applications
2N7002A
Document number: DS31360 Rev. 12 - 2
1 of 6
July 2013
© Diodes Incorporated
2N7002A
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
6
Ω @ V
GS
= 5V
200mA
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Motor
Control
Power Management Functions
Features and Benefits
N-Channel
MOSFET
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals:
Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
2N7002A
-7
SOT23
3,000/Tape & Reel
2N7002A
-13
SOT23
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
SOT23
Top View
Equivalent Circuit
Top View
Pin-Out
D
G
S
ESD PROTECTED TO 1.2kV
Source
Gate
Protection
Diode
Gate
Drain
e3