Diodes 2N7002A - Manual (Page 2)

2N7002A
Document number: DS31360 Rev. 12 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
2N7002A
NEW PROD
UC
T
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
I
D
180
130
115
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T A = +85°C
T
A
= +100°C
I
D
220
160
140
mA
Maximum Continuous Body Diode Forward Current (Note 6) I S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
800 mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6) 540
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
348
°C/W (Note 6) 241
Thermal Resistance, Junction to Case (Note 6) R θJC 91
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site Chengdu A/T Site
YM
Y
MN1
YM MN1
YM