Diodes BC847CDLP - Manual (Page 3)

BC847CDLP
Document number: DS30817 Rev. 7 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847CDLP
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 — — V I
C
= 100µA, I
B
= 0
Collector-Emitter Breakdown Voltage BV
CEO
45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6 — — V I
E
= 100µA, I
C
= 0
DC Current Gain h
FE
420 650 800 — V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage V
CE(sat)
—
55
130
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage V
BE(on)
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current I
CES
— — 15 nA V
CE
= 50V
Collector-Cutoff Current I
CBO
—
— —
— 15
5
nA
µA V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
Gain Bandwidth Product f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance C
CBO
— 2.0 — pF V
CB
= 10V, f = 1.0MHz
Note: 6. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
I
, C
O
L
L
E
CT
O
R
CURRENT
(
A
)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
CE
0
0.05
0.10
0.15
0.20
0.25
0 1 2 3 4 5 6
I = 2mA
B
I = 4mA
B
I = 10mA
B
I = 6mA
B
I = 8mA
B
0
200
400
600
800
1,000
1,200
1,400
0.1 10 1 100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
C
V = 5V
CE
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A