Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DCP69/-16/-25 User Manual
Page 2
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
2 of 5
April 2012
© Diodes Incorporated
DCP69/-16/-25
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current
I
C
-1.0 A
Peak Pulse Current
I
CM
-2.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation (Note 4)
P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 4)
R
θJA
125 °C/W
Power Dissipation (Note 5)
P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 5)
R
θJA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-25 — — V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-20 — — V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5.0 — — V
I
E
= -100
μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
— —
-100
-10
nA
μA
V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
A
= 150
°C
Emitter-Base Cutoff Current
I
EBO
— —
-100
nA
V
EB
= -5.0V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain
DCP69, DCP69-16, DCP69-25
h
FE
50
60
—
—
—
—
—
V
CE
= -10V, I
C
= -5.0mA
V
CE
= -1.0V, I
C
= -1.0A
DCP69
85 — 375
V
CE
= -1.0V, I
C
= -500mA
DCP69-16
100 — 250
V
CE
= -1.0V, I
C
= -500mA
DCP69-25
160 — 375
V
CE
= -1.0V, I
C
= -500mA
Collector-Emitter Saturation Voltage
V
CE(sat)
— — -0.5 V
I
C
= -1.0A, I
B
= -100mA
Base-Emitter Turn-On Voltage
V
BE (on)
— —
-0.7
-1.0
V
V
CE
= -10V, I
C
= -5.0mA
V
CE
= -1.0V, I
C
= -1.0A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
40 200 — MHz
V
CE
= -5.0V, I
C
= -50mA, f = 100MHz
Output Capacitance
C
obo
— 17 — pF
V
CB
= -10V, f = 1 MHz
Notes:
4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at
5. Device mounted on FR-4 PCB with 1in.
2
copper pad layout
6. Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle ≤ 2%.