Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes 1N4448WSF User Manual
Page 2
1N4448WSF
Document number: DS35380 Rev. 3 - 2
2 of 4
August 2011
© Diodes Incorporated
1N4448WSF
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage
V
R(RMS)
53 V
Forward Continuous Current
I
FM
500 mA
Average Rectified Output Current
I
O
250 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0s
I
FSM
4
0.5
A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 4)
P
D
400 mW
Thermal Resistance Junction to Ambient Air (Note 4)
R
θJA
313
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Condition
Reverse Breakdown Voltage (Note 5)
V
(BR)R
75
⎯
V
I
R
= 100
μA
Forward Voltage
V
F
0.62 0.72
V
I
F
= 5.0mA
⎯
0.855
I
F
= 10mA
⎯
1.0
I
F
= 100mA
⎯
1.25
I
F
= 150mA
Leakage Current (Note 5)
I
R
⎯
2.5
μA
V
R
= 75V
⎯
50
μA
V
R
= 75V, T
J
= 150
°C
⎯
30
μA
V
R
= 25V, T
J
= 150
°C
⎯
25 nA
V
R
= 20V
Total Capacitance
C
T
⎯
4.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes:
4. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at5. Short duration pulse test used to minimize self-heating.