Diodes ZNBG4003 - Manual (Page 3)

ZNBG4003
Document number: DS35007 Rev. 1 - 2
3 of 6
www.diodes.com
June 2012
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T
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ZNBG4003
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.) (Note 5)
Parameter Rating Unit
Supply Voltage -0.6 to +10 V
Supply Current 80 mA
Power Dissipation 500 mW
Opereating Temperature Range -40 to +85 °C
Storage Temerature Range -40 to +150 °C
Electrical Characteristics
(@ T
AMB
= +25°C, V
CC
= 5.0V (Note 1), R
CAL
1 = R
CAL
2 = 39k (setting I
D
to 10mA) unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
V
CC
Operating Voltage Range (Note 4) 4.75 8.0 V
I
CC
Supply Current
I
D1
= I
D2
= I
D3
= I
D4
= 0 1.8 4.5 mA
I
CC(L)
I
D1
= I
D2
= I
D3
= I
D4
= 10mA 43 45
V
CSUB
Substrate Voltage (Note 6,7)
I
CSUB
= 0 -3.0 -2.65 -2.0 V
V
CSUB(L)
I
CSUB
= -100µA -2.55 -1.9 V
F
OSC
Oscillator Frequency 150 240 600 kHz
Gate Characteristics
Gate (G1 to G4)
I
G Current Range -100 +500 µA
V
G(L) Voltage Low I
D
= 12mA, I
G
= 10µA -3.0 -2.5 -2.0 V
V
G(H) Voltage High I
D
= 8mA, I
G
= 0 0 0.7 1.0 V
Drain Characteristics
Drain (D1 to D4)
I
D
Current Range 0 15 mA
I
D(OP)
Current Operating Standard Application Circuit 8 10 12.5 mA
V
D(OP)
Voltage Operating I
D
= 10mA 1.8 2.0 2.2 V
dI
D
/dV
CC
Δ I
D
vs V
CC
V
CC
= 5.0V to 8.0V 1.2 %/V
dI
D
/d
TOP
Δ I
D
vs T
OP
T
OP
= -40°C to +85°C 0.09 %/°C
dI
D
/dV
CC
Δ V
D
vs V
CC
V
CC
= 5.0V to 8.0V 0.08 %/V
dI
D
/d
TOP
Δ V
D
vs T
OP
T
OP
= -40°C to +85°C 110 ppm/°C
Output Noise (Note 8)
V
D(NOISE)
Drain Voltage
C
GRATE-GND
= 10nF,
C
DRAIN-GND
= 10nF
0.02 Vpk-pk
V
G(NOISE)
Gate Voltage
C
GRATE-GND
= 10nF,
C
DRAIN-GND
= 10nF
0.005 Vpk-pk
Notes: 4. The two V
CC
pins are internally connected, only one of the pins needs to be powered for the device to function. See applications section for further
information.
5. ESD sensitive, handling precautions are recommended.
6. The negative bias voltages are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
of value 47nF are required for this
purpose.
7. The package (QFN1633) exposed pad must either be connected to Csub or left open circuit.
8. Noise voltage measurements are made with FETs and gate and drain capacitors of value 10nF in place. Noise voltages are not measured in production.