Diodes ZNBG6001 - Manual (Page 3)

SYMBOL PARAMETER CONDITIONS LIMITS UNITS
Min Typ Max
GATE CHARACTERISTICS
I
GO
Output Current Range -30 2000 µ A
Output Voltage
ZNBG4000/1
V
OL
Output Low I
D1
to I
D4
=12mA
I
G1
to I
G4
=0 -3.5 -2 V
I
D1
to I
D4
=12mA
I
G1
to I
G4
= -10
µ
A -3.5 -2 V
V
OH
Output High I
D1
to I
D4
= 8mA
I
G1
to I
G4
= 0 0 1 V
Output Voltage
ZNBG6000/1
V
OL
Output Low I
D1
to I
D6
=12mA
I
G1
to I
G6
= 0 -3.5 -2 V
I
D1
to I
D6
=12mA
I
G1
to I
G6
= -10 µ A -3.5 -2 V
V
OH
Output High I
D1
to I
D6
= 8mA
I
G1
to I
G6
= 0 0 1 V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C NB and C SUB , of
47nF are required for this purpose.
2. The characteristics are measured using two external reference resistors R CAL1 and R CAL2 of value 33k Ω wired from pins R CAL1/2 to
ground. For the ZNBG4000, resistor R CAL1 sets the drain current of FETs 1 and 2, resistor R CAL2 sets the drain current of FETs 3 and 4.
For the ZNBG6000, resistor R CAL1 sets the drain current of FETs 1 and 4, resistor R CAL2 sets the drain current of FETs 2, 3, 5 and 6.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. C
G
, 4.7nF, are connected between gate outputs and ground, C
D
, 10nF, are connected
between drain outputs and ground.
ZNBG4000 ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001
4-139