Diodes ZABG4002 User Manual
Zabg4002, New prod uc t, Summary
ZABG4002
ZABG4002
Document number: DS32047 Rev. 2 - 2
1 of 7
February 2010
© Diodes Incorporated
NEW PROD
UC
T
A Product Line of
Diodes Incorporated
LOW POWER 4 STAGE FET LNA BIAS CONTROLLER
Summary
The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but
its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each
FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current.
Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consumption, component
cost and PCB area whilst enhancing overall reliability.
Features
• Four stage FET bias controller
• Operating range of 3.0V to 8.0V
• Low quiescent supply current, 1.2mA typical
• FET drain voltages set at 2.0V
• FET drain current selectable from 0 to 15mA
• Switchable FETs for power management
• Allows first and second stage FETs to be run at different
(optimum) drain currents
• FET drain voltages and currents held stable over
temperature and Vcc variations
• FETs protected against overstress during power-up and
power-down.
• Internal negative supply generator allowing single supply
operation (available for external use)
• Low external component count
Pin Assignments
Applications
• Twin
LNB’s
• Quad
LNB’s
• US
LNB’s
• Microwave
links
•
PMR and Cellular telephone systems
Single Universal LNB System Diagram
Ho
riz
ontal
ZXHF
5002
ZABG
6002
ZXHF
5002
ZABG
4002
Ve
rt
ica
l
Gain stages
GaAs FET’s
Down
Converter
IF Switching, gain
and control
Ho
riz
ontal
ZXHF
5002
ZABG
6002
ZXHF
5002
ZABG
4002
Ve
rt
ica
l
Gain stages
GaAs FET’s
Down
Converter
IF Switching, gain
and control
Top View
Bottom View
C
SUB
G2
V
CC
GND
G3
D2
V
CC
G4
R
CAL1
D4
D3
D1
G1
C
SUB
R
CA
L
2
C
NB
2
C
NB1