Gate characteristics, Drain characteristics – Diodes ZNBG3211 User Manual
Page 3
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
MIN.
TYP.
MAX.
GATE CHARACTERISTICS
I
GO
Output Current
Range
-30
2000
µ
A
I
Dx
V
POL
I
GOx
(mA)
(V)
(
µ
A)
V
G1O
V
G1L
V
G1H
Output Voltage
Gate 1 Off
Low
High
I
D1
=0
V
POL
=14
I
GO1
=0
I
D1
=12 V
POL
=15.5 I
GO1
=-10
I
D1
=8
V
POL
=15.5 I
GO1
=0
-0.05
-2.7
0.4
0
-2.4
0.75
0.05
-2.0
1.0
V
V
V
V
G2O
V
G2L
V
G2H
Output Voltage
Gate 2 Off
Low
High
I
D2
=0
V
POL
=15.5 I
GO2
=0
I
D2
=12 V
POL
=14
I
GO2
=-10
I
D2
=8
V
POL
=14
I
GO2
=0
-0.05
-2.7
0.4
0
-2.4
0.75
0.05
-2.0
1.0
V
V
V
V
G3L
V
G3H
Output Voltage
Gate 3 Low
High
I
D3
=12
I
GO3
=-10
I
D3
=8
I
GO3
=0
-3.5
0.4
-2.9
0.75
-2.0
1.0
V
V
DRAIN CHARACTERISTICS
I
D
Current
8
10
12
mA
∆
I
DV
∆
I
DT
Current Change
with V
CC
with T
j
V
CC
= 5 to 10V
T
j
=-40 to +70°C
0.5
0.05
%/V
%/°C
V
D1
Drain 1 Voltage:
High
ZNBG3210
ZNBG3211
I
D1
=10mA, V
POL
=15.5V
I
D1
=10mA, V
POL
=15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D2
Drain 2 Voltage:
High
ZNBG3210
ZNBG3211
I
D2
=10mA, V
POL
=14V
I
D2
=10mA, V
POL
=14V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D3
Drain 3 Voltage:
High
ZNBG3210
ZNBG3211
I
D3
=10mA
I
D3
=10mA
2.0
1.8
2.2
2.0
2.4
2.2
V
V
∆
V
DV
∆
V
DT
Voltage Change
with V
CC
with T
j
V
CC
= 5 to 10V
T
j
=-40 to +70°C
0.5
50
%/V
ppm
I
L1
I
L2
Leakage Current
Drain 1
Drain 2
V
D1
=0.5V, V
POL
=14V
V
D2
=0.5V, V
POL
=15.5V
10
10
µ
A
µ
A
ZNBG3210
ZNBG3211
67-3