Diodes TB0640M - TB3500M - Manual (Page 4)

TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
4 of 6
www.diodes.com
November 2011
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TB0640M - TB3500M
I
, OF
F
-ST
A
T
E
CURRENT
(
u
A)
(D
R
M
)
T , JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
J
0.001
0.01
1
0.1
10
100
-25 0 25 50 75 100 125 150
V = 50V
DRM
0.9
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature
J
0.95
1
1.05
1.1
1.15
1.2
-50 -25 0 25 50 75 100 125 150 175
NO
RM
AL
IZ
ED BRE
AKDO
W
N VO
L
T
AG
E
1
1.05
0.95
-50
NO
RM
AL
IZ
ED BREAK
DO
W
N
VO
L
T
AG
E
1.1
-25 0 75 50 25 125 100 175 150
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature
J
1
10
100
1 1.5 3 2.5 2 4 3.5 5 4.5
I,
O
N-
S
T
A
T
E
C
U
R
R
EN
T
(A
)
T
V , ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
T
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50 -25 0 25 50 100 75 125
N
O
R
MA
L
IZ
E
D
H
O
LD
IN
G
C
U
R
R
EN
T
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs. Junction Temperature
0.1
1
1 10 100
NORM
AL
IZ
E
D CAP
A
CI
T
A
N
CE
V , REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias
R