Diodes ZXMHC3F381N8 - Manual (Page 9)

ZXMHC3F381N8
Issue 1.0 - March 2009 9
© Diodes Incorporated
www.diodes.com
P-channel typical characteristics –continued
1 10
0
200
400
600
800
1000
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C C
apa
cit
a
nc
e (
pF)
-V
DS
- Drain - Source Voltage (V)
0 5 10 15
0
1
2
3
4
5
6
7
8
9
10
I
D
= 5A
V
DS
= 15V
Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage
Q - Charge (nC)
-V
GS
G
a
te-
S
ourc
e
V
ol
ta
ge (
V
)
Test circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k 0.2 ␮F 12V Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(off)
V
DS
V
DD
R
D
R
G
Pulse width Ͻ 1␮S
Duty factor 0.1%
V
DS
I
D
I
G