Diodes ZXMHC3F381N8 User Manual
Page 7
ZXMHC3F381N8
Issue 1.0 - March 2009 7
© Diodes Incorporated
P-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
-30 V
I
D
= -250
μA, V
GS
= 0V
Zero Gate voltage Drain
current
I
DSS
-0.5
µA
V
DS
= -30V, V
GS
= 0V
Gate-Body leakage
I
GSS
±
100
nA
V
GS
=
±20V, V
DS
= 0V
Gate-Source threshold
voltage
V
GS(th)
-1.0 -3.0
V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source
on-state resistance
(a)
R
DS(on)
0.055
0.080
Ω
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
Forward
Transconductance
(a) (c)
g
fs
14
S
V
DS
= -15V, I
D
= -5A
Dynamic
Capacitance
(c)
Input capacitance
C
iss
670
pF
V
DS
= -15V, V
GS
= 0V
f= 1MHz
Output capacitance
C
oss
126 pF
Reverse transfer
capacitance
C
rss
70 pF
Switching
(b) (c)
Turn-on-delay time
t
d(on)
1.9 ns
V
DD
= -15V, V
GS
= -10V
I
D
= -1A
R
G
≅ 6Ω
Rise time
t
r
3.0 ns
Turn-off delay time
t
d(off)
30 ns
Fall time
t
f
21 ns
Gate charge
(c)
Total Gate charge
Q
g
12.7 nC
V
DS
= -15V, V
GS
= -10V
I
D
= -5A
Gate-Source charge
Q
gs
2.0 nC
Gate-Drain charge
Q
gd
2.4 nC
Source–Drain diode
Diode forward voltage
(a)
V
SD
-0.82
-1.2 V
I
S
= -1.7A, V
GS
= 0V
Reverse recovery time
(c)
t
rr
16.5 ns
I
S
= -2.1A, di/dt= 100A/
μs
Reverse recovery charge
(c)
Q
rr
11.5 nC
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing