Recommended operating conditions, Thermal characteristics, Safe operating area – Diodes ZXMS6004SG User Manual
Page 4: Derating curve, Transient thermal impedance, Pulse power dissipation
IntelliFET
®
is a registered trademark of Diodes Incorporated
ZXMS6004SG
Document number: DS32247 Rev. 1 - 2
4 of 9
April 2014
© Diodes Incorporated
ZXMS6004SG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Recommended Operating Conditions
The ZXMS6004SG is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol
Min
Max
Unit
Input Voltage Range
V
IN
0 5.5 V
Ambient Temperature Range
T
A
-40 +125 °C
High Level Input Voltage for MOSFET to be on
V
IH
3 5.5 V
Low level input voltage for MOSFET to be off
V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0 36 V
Thermal Characteristics
1
10
10m
100m
1
10
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
See Note (a)
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drai
n Cur
rent
(
A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
See Note (a)
Derating Curve
Temperature (°C)
M
ax P
o
we
r Di
ss
ip
at
io
n (W
)
See Note (b)
100µ 1m
10m 100m
1
10
100
1k
0
20
40
60
80
100
120
T
amb
=25°C
See Note (a)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
he
rm
al
Resi
st
an
ce
(°
C/
W)
Pulse Width (s)
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25°C
See Note (a)
Pulse Power Dissipation
Pulse Width (s)
Ma
xi
mu
m
Po
w
e
r (
W
)