Diodes ZXMS6004FF - Manual (Page 3)

ZXMS6004FF
Document number: DS33609 Rev. 5 - 2
3 of 8
www.diodes.com
March 2014
© Diodes Incorporated
ZXMS6004FF
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6004FF is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol Min Max Unit
Input Voltage Range V
IN
0 5.5 V
Ambient Temperature Range T
A
-40 +125 °C
High Level Input Voltage for MOSFET to be on V
IH
3 5.5 V
Low level input voltage for MOSFET to be off V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred) V
P
0 16 V
Thermal Characteristics
1 10
10m
100m
1
Limited by Over-Current Protection
Single Pulse
Tamb=25°C
15X15mm FR4
1oz Cu
Limited
by R
DS(on)
1ms
10ms
100ms
1s DC
Safe Operating Area
I D
Dr
ain Cur
rent
(A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
15X15mm FR4
1oz Cu
Derating Curve
Temperature (°C)
M
ax
P
ower
Dis
sipat
ion
(W)
50X50mm FR4
2oz Cu
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
140
160
Tamb=25°C
15X15mm FR4
1oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
erm
a
l Res
is
tanc
e
(°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100 Single Pulse
Tamb=25°C
15X15mm FR4
1oz Cu
Pulse Power Dissipation
Pulse Width (s)
Ma
xi
mu
m
P
ow
e
r (
W
)