Diodes ZXMS6004FF - Manual (Page 2)

ZXMS6004FF
Document number: DS33609 Rev. 5 - 2
2 of 8
www.diodes.com
March 2014
© Diodes Incorporated
ZXMS6004FF
IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Functional Block Diagram
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Continuous Drain-Source Voltage V
DS
60 V
Drain-Source Voltage for Short Circuit Protection V
DS(SC)
36 V
Continuous Input Voltage V
IN
-0.5 to +6 V
Continuous Input Current @-0.2V ≤ V
IN
≤ 6V
Continuous Input Current @V
IN
< -0.2V or V
IN
> 6V
I
IN
No limit
│I
IN
│≤2
mA
Pulsed Drain Current @V
IN
= 3.3V I
DM
2 A
Pulsed Drain Current @V
IN
= 5V I
DM
2.5 A
Continuous Source Current (Body Diode) (Note 5) I
S
1 A
Pulsed Source Current (Body Diode) I
SM
5 A
Unclamped Single Pulse Inductive Energy,
T
J
= +25°C, I
D
= 0.5A, V
DD
= 24V
E
AS
90 mJ
Electrostatic Discharge (Human Body Model) V
ESD
4000 V
Charged Device Model V
CDM
1000 V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation at T
A
= +25°C (Note 5)
Linear Derating Factor
P
D
0.83
6.66 W
mW/°C
Power Dissipation at T
A
= +25°C (Note 6)
Linear Derating Factor
P
D
1.5
12.0
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
150 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
83 °C/W
Thermal Resistance, Junction to Case (Note 7) R
θJC
44 °C/W
Operating Temperature Range T
J
-40 to +150 °C
Storage Temperature Range T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance from junction and the mounting surfaces of the drain pins.