Diodes ZXMS6004DG - Manual (Page 5)

ZXMS6004DG
Issue 1 - December 2008 5 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
Parameter Symbol Min Typ Max Unit Conditions
Static Characteristics
Drain-Source clamp voltage V
DS(AZ)
60 65 70 V I
D
=10mA
Off-state drain Ccrrent I
DSS
500 nA V
DS
=12V, V
IN
=0V
Off-state drain current I
DSS
1
μA
V
DS
=36V, V
IN
=0V
Input threshold voltage V
IN(th)
0.7 1 1.5 V V
DS
=V
GS
, I
D
=1mA
Input current I
IN
60 100
μA
V
IN
=+3V
Input current I
IN
120 200
μA
V
IN
=+5V
Input current while over
temperature active
400
μA
V
IN
=+5V
Static Drain-Source on-state
resistance
R
DS(on)
400 600 m
Ω
V
IN
=+3V, I
D
=0.5A
Static Drain-Source on-state
resistance
R
DS(on)
350 500 m
Ω
V
IN
=+5V, I
D
=0.5A
Continuous drain current (a) I
D
0.9 A V
IN
=3V; T
A
=25°C
Continuous drain cCurrent
(a)
I
D
1.0 A V
IN
=5V; T
A
=25°C
Continuous drain current (b) I
D
1.2 A V
IN
=3V; T
A
=25°C
Continuous drain current (b) I
D
1.3 A V
IN
=5V; T
A
=25°C
Current limit I
D(LIM)
0.7 1.7 A V
IN
=+3V,
Current limit (c) I
D(LIM)
1 2.2 A V
IN
=+5V
Dynamic characteristics
Turn-on delay time t
d(on)
5
μs
V
DD
=12V, I
D
=0.5A,
V
GS
=5V Rise time t
r
10
μs
Turn-off delay time t
d(off)
45
μs
Fall time f
f
15
μs