Diodes ZXMS6004DG - Manual (Page 3)

ZXMS6004DG
Issue 1 - December 2008 3 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
Absolute maximum ratings
Thermal resistance
NOTES
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
conditions.
(c) Thermal resistance from junction to the mounting surface of the drain pin.
Parameter Symbol Limit Unit
Continuous Drain-Source voltage V
DS
60 V
Drain-Source voltage for short circuit protection V
DS(SC)
36 V
Continuous input voltage V
IN
-0.5 ... +6 V
Continuous input current
-0.2V ≤V
IN
≤6V
V
IN
<-0.2V or V
IN
>6V
I
IN
No limit
│I
IN
│≤2
mA
Operating temperature range T
j
, -40 to +150 °C
Storage temperature range T
stg
-55 to +150 °C
Power dissipation at T
A
=25°C (a)
Linear derating factor
P
D
1.3
10.4
W
mW/°C
Power dissipation at T
A
=25°C (b)
Linear derating factor
P
D
3.0
24
W
mW/°C
Pulsed drain current @ V
IN
=3.3V I
DM
2 A
Pulsed drain current @ V
IN
=5V I
DM
2.5 A
Continuous source current (Body Diode) (a) I
S
1 A
Pulsed dource current (Body Diode) I
SM
5 A
Unclamped single pulse inductive energy,
Tj=25°C, I
D
=0.5A, V
DD
=24V
E
AS
490 mJ
Electrostatic discharge (Human body model) V
ESD
4000 V
Charged device model V
CDM
1000 V
Parameter Symbo Value Unit
Junction to ambient (a) R
θJA
96 °C/W
Junction to ambient (b) R
θJA
42 °C/W
Junction to case (c) R
θJC
12 °C/W