Diodes ZXMS6003G - Manual (Page 7)

ZXMS6003G
Issue 2 - March 2007 7 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated) (cont.)
NOTES:
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Parameter Symbol Min Typ Max Unit Conditions
Protection functions (‡)
Required input voltage for
over temperature protection V
PROT
4.5 V
Thermal overload trip
temperature T
JT
150 175 °C
Thermal hysteresis 1 °C
Unclamped single pulse
inductive energy
T
j
=25°C
E
AS
550 mJ I
D(ISO
)=0.7A,
V
DD
=32V
Unclamped single pulse
inductive energy
T
j
=150°C
E
AS
200 mJ I
D(ISO
)=0.7A,
V
DD
=32V
Status flag
Normal operation V
STATUS
4.95 V V
IN
= 5V
Current limit operating V
STATUS
2.5 V V
IN
= 5V
Thermal shutdown activated V
STATUS
0.2 1 V V
IN
= 5V
Normal operation V
STATUS
8.0 V V
IN
= 10V
Current limit operation V
STATUS
3.0 V V
IN
= 10V
Thermal shutdown activated V
STATUS
0.35 1 V V
IN
= 10V
Inverse diode
Source drain voltage V
SD
1 V V
IN
=0V, -I
D
=1.4A