Diodes ZXMC6A09DN8 - Manual (Page 2)

ZXMC6A09DN8
ISSUE 4 - MAY 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R θJA 100 °C/W
Junction to Ambient
(b)(e)
R θJA 69 °C/W
Junction to Ambient (b)(d) R θJA 58 °C/W
THERMAL RESISTANCE
Notes:
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
PARAMETER SYMBOL N-Channe
l
P-Channel UNIT
Drain-Source Voltage V
DSS
60 -60 V
Gate-Source Voltage V
GS
Ϯ20 Ϯ20 V
Continuous Drain Current@V
GS
=10V; T
A
=25 ЊC (b)(d)
@V
GS
=10V; T
A
=25 ЊC (b)(d)
@V
GS
=10V; T
A
=25 ЊC (a)(d)
I
D
5.1
4.1
3.9 -4.8
-3.8
-3.7 A
A
Pulsed Drain Current
(c)
I
DM
25 -23 A
Continuous Source Current (Body Diode) (b) I
S
3.5 -3.3 A
Pulsed Source Current (Body Diode) (c) I
SM
25.4 -23.8 A
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS