Diodes ZXMP10A18K - Manual (Page 4)

ZXMP10A18K
Issue 1 - August 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
-100 V I
D
= -250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1
␮A
V
DS
= -100V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-2.0 -4.0 V I
D
= -250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%
R
DS(on)
0.150
0.190 ⍀ V
GS
= -10V, I
D
= -2.8A
V
GS
= -6V, I
D
= -2.4A
Forward transconductance (*)(‡) g
fs
6.0 S V
DS
= -15V, I
D
= -2.8A
Dynamic (‡) (3)
Input capacitance C
iss
1055 pF V
DS
= -50V, V
GS
=0V
f=1MHz
Output capacitance C
oss
90 pF
Reverse transfer capacitance C
rss
76 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
4.9 ns V
DD
= -50V, I
D
= -1A
R
G
=6.0 ⍀, V
GS
= -10V
Rise time t
r
6.8 ns
Turn-off delay time t
d(off)
33.9 ns
Fall time t
f
17.9 ns
Total gate charge Q
g
26.9 nC V
DS
= -50V, V
GS
= -10V
I
D
= -2.8A
Gate-source charge Q
gs
3.9 nC
Gate drain charge Q
gd
10.2 nC
Source-drain diode
Diode forward voltage (*) V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -3.5A,
V
GS
=0V
Reverse recovery time (‡) t
rr
49 ns T
j
=25°C, I
S
= -2.8A,
di/dt=100A/ms
Reverse recovery charge (‡) Q
rr
107 nC