Diodes ZXMP10A18K - Manual (Page 2)

ZXMP10A18K
Issue 1 - August 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 ␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
-100 V
Gate-source voltage V
GS
± 20 V
Continuous drain current @ V
GS
= 10V; T
amb
=25°C (b) I
D
-5.9 A
@ V
GS
= 10V; T
amb
=70°C (b) -4.7
@ V
GS
= 10V; T
amb
=25°C (a) -3.8
Pulsed drain current (c) I
DM
-21.1 A
Continuous source current (body diode) (b) I
S
-10 A
Pulsed source current (body diode) (c) I
SM
-21.1 A
Power dissipation at T
amb
= 25°C (a) P
D
4.3 W
Linear derating factor 34.4 mW/°C
Power dissipation at T
amb
= 25°C (b) P
D
10.2 W
Linear derating factor 81.3 mW/°C
Power dissipation at T
amb
= 25°C (d) P
D
2.17 W
Linear derating factor 17.4 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R
⍜JA
29 °C/W
Junction to ambient (b) R ⍜JA 12.3 °C/W
Junction to ambient (d) R
⍜JA
57.6 °C/W