Electrical characteristics – Diodes ZXMP10A18G User Manual
Page 4
ZXMP10A18G
Document Number DS33598 Rev. 2 - 2
4 of 8
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A18G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100
⎯
⎯
V
I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1
μA
V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2.0
⎯
-4.0 V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 6)
R
DS (ON)
⎯
⎯
150
m
Ω
V
GS
= -10V, I
D
= -2.8A
190
V
GS
= -6V, I
D
= -2.4A
Forward Transconductance (Notes 6 & 7)
g
fs
⎯
6.0
⎯
S
V
DS
= -15V, I
D
= -2.8A
Diode Forward Voltage (Note 6)
V
SD
⎯
-0.85 -0.95 V I
S
= -3.5A, V
GS
= 0V, T
J
= 25°C
Reverse recovery time (Note 7)
t
rr
49
⎯
ns
I
S
= -2.8A, di/dt = 100A/
μs,
T
J
= 25°C
Reverse recovery charge (Note 7)
Q
rr
⎯
107
⎯
nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
1055
⎯
pF
V
DD
= -50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
90
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
76
⎯
pF
Total Gate Charge (Note 8)
Q
g
⎯
26.9
⎯
nC
V
GS
= -10V, V
DS
= -50V
I
D
= -2.8A
Gate-Source Charge (Note 8)
Q
gs
⎯
3.9
⎯
nC
Gate-Drain Charge (Note 8)
Q
gd
⎯
10.2
⎯
nC
Turn-On Delay Time (Note 8)
t
D(on)
⎯
4.6
⎯
ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 8)
t
r
⎯
6.8
⎯
ns
Turn-Off Delay Time (Note 8)
t
D(off)
⎯
33.9
⎯
ns
Turn-Off Fall Time (Note 8)
t
f
⎯
17.9
⎯
ns
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.