Maximum ratings, Thermal characteristics – Diodes ZXMP10A18G User Manual
Page 2
ZXMP10A18G
Document Number DS33598 Rev. 2 - 2
2 of 8
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A18G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
-100 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 3)
I
D
-3.7
A
T
A
= 70°C (Note 3)
-3.0
(Note 2)
-2.6
Pulsed Drain current
V
GS
= 10V
(Note 4)
I
DM
-16.5 A
Continuous Source current (Body diode)
(Note 3)
I
S
-5.3 A
Pulsed Source current (Body diode)
(Note 4)
I
SM
-16.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
2.0
16
W
mW/
°C
(Note 3)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
62.5
°C/W
(Note 3)
32.2
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
7.65
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).