Electrical characteristics, Zxmp10a17k – Diodes ZXMP10A17K User Manual
Page 4
ZXMP10A17K
Document Number DS32028 Rev. 5 - 2
4 of 8
April 2014
© Diodes Incorporated
ZXMP10A17K
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100
⎯
⎯
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-0.5 µA
V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2.0
⎯
-4.0 V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS(ON)
⎯
⎯
0.350
Ω
V
GS
= -10V, I
D
= -1.4A
0.450
V
GS
= -6V, I
D
= -1.2A
Forward Transconductance (Notes 10 & 11)
g
fs
⎯
2.8
⎯
S
V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 10)
V
SD
⎯
-0.85 -0.95 V I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 11)
t
rr
33
⎯
ns
I
S
= -1.5A, di/dt = 100A/µs
Reverse recovery charge (Note 11)
Q
rr
⎯
48
⎯
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯
424
⎯
pF
V
DS
= -50V, V
GS
= 0V
F = 1MHz
Output Capacitance
C
oss
⎯
36.6
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
29.8
⎯
pF
Total Gate Charge (Note 12)
Q
g
⎯
7.1
⎯
nC
V
GS
= -6.0V
V
DS
= -50V
I
D
= -1.4A
Total Gate Charge (Note 12)
Q
g
⎯
10.7
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 12)
Q
gs
⎯
1.7
⎯
nC
Gate-Drain Charge (Note 12)
Q
gd
⎯
3.8
⎯
nC
Turn-On Delay Time (Note 12)
t
D(on)
⎯
3.0
⎯
ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 12)
t
r
⎯
3.5
⎯
ns
Turn-Off Delay Time (Note 12)
t
D(off)
⎯
13.4
⎯
ns
Turn-Off Fall Time (Note 12)
t
f
⎯
7.2
⎯
ns
Notes:
10. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.