Diodes ZXMP10A17K - Manual (Page 2)

ZXMP10A17K
Document Number DS32028 Rev. 5 - 2
2 of 8
www.diodes.com
April 2014
© Diodes Incorporated
ZXMP10A17K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-100 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 6)
I
D
-3.9
A T
A
= +70°C (Note 6) -3.1
(Note 5) -2.4
Pulsed Drain current V
GS
= 10V (Note 7) I
DM
-11.3 A
Continuous Source Current (Body diode) (Note 6) I
S
-8.7 A
Pulsed Source Current (Body diode) (Note 7) I
SM
-11.3 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 5)
P
D
4.0
32.0
W
mW/ °C
(Note 6)
10.2
80.8
(Note 9)
2.0
16.1
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
31
°C/W (Note 6) 12.3
(Note 9) 62
Thermal Resistance, Junction to Case (Note 8) R
θJL
2.4 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to 150 °C
Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (1), except the device is measured at t
≤ 10 sec.
7. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.