Diodes ZVP4525Z - Manual (Page 2)

ZVP4525Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2007
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 103 °C/W
Junction to Ambient (b) RθJA 50 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
VDSS 250 V
Gate Source Voltage VGS
±40 V
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)
ID
ID
-205
-164 mA
mA
Pulsed Drain Current (c) IDM -1 A
Continuous Source Current (Body Diode) IS
-0.75 A
Pulsed Source Current (Body Diode) ISM
-1 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD 1.2
9.6 W
mW/°C
Operating and Storage Temperature Range Tj : Tstg
-55 to +150 °C
2